Last edited by Arazragore
Saturday, July 18, 2020 | History

5 edition of Infrared Applications of Semiconductors II found in the catalog.

Infrared Applications of Semiconductors II

Symposium Held December 1-4, 1997, Boston, Massachusetts, U.S.A (Materials Research Society Symposia Proceedings, V. 484.)

  • 182 Want to read
  • 5 Currently reading

Published by Materials Research Society .
Written in English

    Subjects:
  • Science/Mathematics,
  • Technology,
  • Materials,
  • Congresses,
  • Technology & Industrial Arts,
  • Semiconductors,
  • Semiconductor lasers,
  • Optics,
  • Engineering - Electrical & Electronic,
  • Infrared technology

  • Edition Notes

    ContributionsDonald L. McDaniel (Editor), Mahmoud Omar Manasreh (Editor), Robert H. Miles (Editor), S. Sivananthan (Editor)
    The Physical Object
    FormatHardcover
    Number of Pages692
    ID Numbers
    Open LibraryOL8608994M
    ISBN 101558993894
    ISBN 109781558993891

    Abstract. The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg 1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium : Baker, Ian. Professor Krishna is a world leading researcher and innovator in the field of narrow bandgap semiconductors applied to infrared imaging sensors and related technologies. He has more than 13 years of experience in the design, growth, fabrication and testing of infrared detectors and focal plane arrays.

    Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors - Ebook written by Sadao Adachi. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors. Comparing Thermal Imagers with Image Intensifiers Homeland Security and other Nonmilitary Applications Aerial-, ground-, and sea-based search and rescue Firefighting and first response Space and airborne reconnaissance Police surveillance and crime detection and security

      Molecular-beam epitaxy of HgCdTe for electro-optical infrared applications / José Manual Arias Cortés New (II-VI)IV ternary alloy semiconductors and their properties / Pages:   Thermal Infrared Focal Plane Arrays for Earth Science • Thermal infrared focal plane arrays (FPAs) for a variety of Earth Science related applications – Geology, ocean and ice changes, de-forestation, forest fires, soil moisture and plant health, weather, gas detection, pollution monitoring, • Infrared band of interestsFile Size: 2MB.


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Infrared Applications of Semiconductors II Download PDF EPUB FB2

Get this from a library. Infrared applications Infrared Applications of Semiconductors II book semiconductors II: symposium held December, Boston, Massachusetts, U.S.A.

[Donald L McDaniel;]. This book series is published by Taylor and Francis and it contains 21 volumes. “Infrared Applications of Semiconductors II.” (Materials Research Society, Pittsburgh, ), Volume “Infrared Applications of Semiconductors: Materials, Processing, and Devices.”.

This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Show less Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting.

Putting semiconductors to work. Transistors, and many other electronic devices, are made of semiconductors — materials that conduct electricity only weakly under certain conditions.

Radar technology, developed during World War II, used tow semiconductors, germanium and silicon, to detect short-wave radio signals. Request PDF | Semiconductor optical fibres for infrared applications: A review | Over the last decade a new class of optical fibre has emerged that incorporates semiconductor materials within the.

•Type-II superlattice (T2SL) of particular interest for infrared detectors –Energy band gap can be made smaller than the constituent semiconductors –Also: type-II strained-layer superlattice (T2SLS) •Examples of infrared T2SLthat can be grown on GaSb substrate –InAs/GaSb, InAs/GaInSb, InAs/InAsSb, InAs/InSb, InAsSb/InSbFile Size: 3MB.

This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artificially synthesized quantum structures.

This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artifically synthesized quantum by: Infrared Applications of Semiconductors III Symposium held November December 2,Boston, Massachusetts, U.S.A.

Applications to Mid-Infrared Semiconductor Lasers 11 Type-II InAsTnGaSb Superlattices on Compliant GaAs Substrates G.J. Brown, K. Mahalingam, A.

Saxler, R. Linville, F. The type II band offset reduces the valence-conduction bandgap, and In(As,Sb) superlattices extend the photoresponse of III–V semiconductors to long wavelengths (>10 µm) for IR optoelectronic applications. Infrared detectors, spanning the entire 8–12 µm window in the atmosphere, can be constructed from these superlattices.

This series focuses on electro-optical applications of advance semiconductors such as quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared detectors based on III-V Semiconductor quantum wells and superlattices as a new generation for infrared detectors based on artifically synthesized quantum : M.

Razeghi. related to applications of such promising semiconductors as HgI 2 and PbI 2 in nuclear detectors is the fact that their layered crystal structure makes these materials soft and fragile. Narrow Band-gap Semiconductor Narrow band-gap semiconductors such as InSb, InAs, PbSe, PbTe, and PbSFile Size: KB.

Series: Semiconductors and Semimetals Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in.

Volodymyr Tetyorkin, Andriy Sukach and Andriy Tkachuk (December 19th ). Infrared Photodiodes on II-VI and III-V Narrow-Gap Semiconductors, Photodiodes - From Fundamentals to Applications, Ilgu Yun, IntechOpen, DOI: / Available from:Cited by: 3. Professor Anthony Krier is the head of the Condensed Matter Division of the Physics Department at Lancaster University, UK.

His research is in the optoelectronic properties of semiconductor and polymer materials and the fabrication of diode and laser devices emitting in the 2–10 µm (mid-infrared) range.

The field of narrow bandgap II-VI semiconductors is dominated by the compound Hg1−xCdxTe (MCT), although some Hg-based alternatives to this ternary have also been suggested. A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species.

These semiconductors typically form in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).

Coherent sources of mid-infrared (mid-IR) radiation are of great interest for a wide range of scienti?c and technological applications from spectroscopy and frequency metrology to information technology, industrial process control, pho- chemistry, photobiology and photomedicine.

The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.

Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field.

Infrared applications of semiconductors III: symposium held November December 2,Boston, Massachusetts, U.S.A. Infrared technology and applications XXIII: April,Orlando, Florida (Proceedings of SPIE) Growth and Characterization of Materials for Infrared Detectors II: July San Diego, California (Proceedings of Spie) Infrared Applications of Semiconductors III.

Materials Research Society Symposium Proceedings Volume Infrared Applications of Semiconductors: Volume by Francois H Julien (Editor), M Omar Manasreh (Editor), Thomas H Myers (Editor) starting at $ Infrared Applications of Semiconductors: Volume has 1 available editions to buy at Half Price Books Marketplace.

The infrared is of great relevance for medical applications and there is a high demand for lasers that operate in this region that can be used for illumination, imaging, and cutting soft tissue.

However, as each new laser emerges, so does the need for optical fibres that can deliver, and/or collect, light from around the human by: 8.